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Surface and contact passivation

Conference - ACDC

Advanced temperature characterisation of silicon nitride surface passivation layer

27th International Photovoltaic Science and Engineering Conference, 2017

S. Nie, Y. Zhu, S. Bernardini, M. Bertoni, Z. Hameiri

n/a
Poster

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Conference - Joint

Industrially feasible dopant-free, carrier-selective passivating contacts for high-efficiency crystalline silicon solar cells

27th International Photovoltaic Science and Engineering Conference, 2017

X. Yang, K. Weber, Z. Hameiri, S. De Wolf

n/a

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Conference - ACDC

Development of low-absorption and thermally-stable silicon nitride films for surface passivation of silicon solar cells

26th International Photovoltaic Science and Engineering Conference, 2016

Z. Hameiri, N. Borojevic, L. Mai, N. Nandakumar, K. Kim, S. Winderbaum

n/a

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Conference - ACDC

In-situ diagnostics of PECVD AlOx deposition by optical emission spectroscopy

26th International Photovoltaic Science and Engineering Conference, 2016

K. Kim, Z. Hameiri, S. Winderbaum

n/a

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Conference - ACDC

Impact of deposition condition and thermal process on industrial PECVD AlOx layer for surface passivation

26th International Photovoltaic Science and Engineering Conference, 2016

K. Kim, N. Borojevic, S. Duttagupta, S. Winderbaum, Z. Hameiri

n/a

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Conference - ACDC

Advanced evaluation of surface passivation nonuniformity from photoluminescence imaging of undiffused lifetime samples

26th International Photovoltaic Science and Engineering Conference, 2016

F.J. Ma, M. Li, Z. Hameiri

n/a

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Conference - ACDC

Should the refractive index at 633 nm be used to characterize silicon nitride films?

43rd IEEE Photovoltaic Specialists Conference, 2016

Z. Hameiri, N. Borojevic, L. Mai, N. Nandakumar, K. Kim, S. Winderbaum

Link

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Conference - ACDC

Outstanding as-deposited surface passivation by industrial PECVD aluminum oxide

43rd IEEE Photovoltaic Specialists Conference, 2016

K. Kim, Z. Hameiri, N. Borojevic, S. Duttagupta, S. Winderbaum

Link

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Conference - ACDC

On the limitation of the refractive index at 633 nm to characterize silicon nitride films

3rd International Conference on Emerging Electronics, 2016

Z. Hameiri, N. Borojevic, L. Mai, N. Nandakumar, K. Kim, S. Winderbaum

n/a

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