A dynamic calibration method for injection-dependent charge carrier lifetime measurements
A dynamic calibration method for injection-dependent charge carrier lifetime measurements
A dynamic calibration method for injection-dependent charge carrier lifetime measurements
Investigation of defects and interfaces in silicon wafers
Journal - ACDC
Investigation of light-induced degradation in gallium- and indium-doped Czochralski silicon
Solar Energy Materials and Solar Cells, 2023
S. Jafari, M. Figg, Z. Hameiri
Journal - ACDC
Bulk defect characterization in metalized solar cells using temperature-dependent Suns-Voc measurements
Solar Energy Materials and Solar Cells, 2022
S. Jafari, M. Abbott, D. Zhang, J. Wu, F. Jiang, Z. Hameiri
Journal - ACDC
On the correlation between light-induced degradation and minority carrier traps in boron-doped Czochralski silicon
ACS Applied Materials & Interfaces, 2021
S. Jafari, Y. Zhu, F. Rougieux, J. A. T. De Guzman, V. P. Markevich, A. R. Peaker, Z. Hameiri
Journal - ACDC
Investigation of minority carrier traps in p-type mc-Si: Effect of firing and laser annealing
Solar Energy Materials and Solar Cells, 2021
S. Jafari, Z. Hameiri
Journal - ACDC
Electrical characterization of thermally activated defects in n-type float-zone silicon
IEEE Journal of Photovoltaics, 2021
Y. Zhu, F. Rougieux, N.E. Grant, J.A.T. De Guzman, J.D. Murphy, V.P. Markevich, G.Coletti, A.R. Peaker, Z. Hameiri
Journal - ACDC
Erratum to “Reassessments of minority carrier traps in silicon with photoconductance decay measurements”
IEEE Journal of Photovoltaics, 2021
Y. Zhu, M.K. Juhl, G. Coletti, Z. Hameiri
Journal - Joint
Impurity gettering by silicon nitride films: Kinetics, mechanisms and simulation
ACS Applied Energy Materials, 2021
T. Le, Z. Hameiri, T. Truong, Z. Yang, D. MacDonald, A. Liu
Journal - Joint
Photoconductance determination of carrier capture cross sections of slow traps in silicon through variable pulse filling
IEEE Journal of Photovoltaics, 2021
M. Siriwardhana, Y. Zhu, Z. Hameiri, D. Macdonald, F. Rougieux
Journal - Joint
The role of charge and recombination-enhanced-defect-reaction effects in the dissociation of FeB pairs in p-type silicon under injection
Physica Status Solidi - Rapid Research Letters, 2021
C. Sun, Y. Zhu, M. Juhl, W. Yang, F. Rougieux, Z. Hameiri, D. Macdonald
Journal - ACDC
Detailed analysis of radiative transitions from defects in n-type monocrystalline silicon using temperature- and light intensity-dependent spectral photoluminescence
Solar Energy Materials and Solar Cells, 2020
R.L. Chin, M. Pollard, Y. Zhu, Z. Hameiri